Just as skyscrapers let urban planners optimize available space by building upward, Intel's 3-D Tri-Gate transistor structure provides a way to manage density. Since these fins are vertical in nature, ...

In this paper, a Floating Gate Field Effect Transistor (FGFET), which has a structure similar to a floating gate memory cell transistor that has been widely used in the past and is highly applicable ...

Nanosheet, or "gate-all-around" transistors turn this fin into a stack of individual ribbons, and the design should be able to improve power efficiency and let engineers more easily tweak the ...

Efficient Power Conversion has developed a series of gallium nitride transistors able to operate in switching applications above 10 MHz. The devices are suited for envelope tracking ...

Here, Rich Miron, Applications Engineer at Digi-Key Electronics explores the operation of switch mode power supplies and explores make Vs. buy decision process for power supplies. Miron also ...

In a paper released this week, Chinese researchers explain they've created a transistor with the smallest gate length ever reported.

Carbon nanotube (CNT) transistors are essentially gate-all-around (GAA) field-effect transistors (GAA FETs) that can be applied to pretty much everything, and have all the things that one expects ...

For example, the number of atoms that tunnel from the source to the drain is extremely sensitive to the number of atoms in the gate, meaning atomic transistors could make more effective amplifiers.