A six-pack IGBT module can be paralleled to obtain higher power levels.

Since their launch in 1990, Mitsubishi Electric’s IGBT-based power semiconductor modules have been highly evaluated for their excellent performance and high reliability, leading to diverse ...

Mitsubishi Electric Corporation (TOKYO:6503) announced today the coming launch of its T-series 2.0kV Insulated Gate Bipolar Transistor (IGBT) Module f ...

Mitsubishi Electric Corporation announced today the launch of its LV100-type T-series insulated-gate bipolar transistor module for industrial uses. The LV100 package, which achieves high ...